PART |
Description |
Maker |
RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
HAT2198R HAT2198R-EL-E |
Silicon N Channel Power MOS FET Power Switching 通道功率MOS场效应管电源开 Power MOSFETs for General Switching
|
Fluke, Corp. RENESAS[Renesas Electronics Corporation]
|
RJK0368DPA-00-J0 RJK0368DPA10 |
20 A, 30 V, 0.0224 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
HAT1093C-EL-E HAT1095C-EL-E HAT1095C HAT1093C |
2000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Silicon P Channel MOSFET Power Switching Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
UPA2716GR |
SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET
|
NEC[NEC]
|
UPA2710GR |
SWITCHING N- AND P-CHANNEL POWER MOS FET SWITCHING P-CHANNEL POWER MOSFET
|
NEC
|
UPA2719GR |
SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET
|
NEC[NEC]
|
UPA2706TP |
SWITCHING N- AND P-CHANNEL POWER MOS FET SWITCHING N-CHANNEL POWER MOSFET
|
NEC[NEC]
|
UPA2706GR UPA2706GR-E2 UPA2706GR-E1 UPA2706TP |
SWITCHING N- AND P-CHANNEL POWER MOS FET Nch enhancement-type MOSFET SWITCHING N-CHANNEL POWER MOSFET
|
NEC
|
MG75Q1JS40 E002405 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的(不适用沟道绝缘栅双极型晶体管) N CHANNEL IGBT (HIGH POWER SWITCHING / CHOPPER APPLICATIONS) N CHANNEL IGBT (HIGH POWER SWITCHING CHOPPER APPLICATIONS) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)
|
Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
HAT1126R HAT1126R-EL-E HAT1126RJ HAT1126RJ-EL-E |
Transistors>Switching/MOSFETs Silicon P Channel Power MOS FET High Speed Power Switching P通道功率MOS FET的高速电源开
|
Renesas Electronics Corporation. Renesas Electronics, Corp.
|